INFLUENCE OF RIDGE HEIGHT IN THE TEMPERATURE DISTRIBUTION AND THERMAL RESISTANCE OF GaInNAs LASER DIODES

被引：0
作者：
Abelenda, A. [1 ]
Delgado, I. [2 ]
Sanchez, M. [3 ]
机构：
[1] Univ La Habana, IMRE, Havana, Cuba
[2] Inst Geofis & Astronomia, Havana, Cuba
[3] Univ La Habana, Fac Fis, Havana, Cuba
来源：
REVISTA CUBANA DE FISICA | 2012年 / 29卷 / 01期
关键词：
D O I：
暂无
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
At present the laser diodes used in optical fiber communications systems are based on GaInPAs. These lasers have a bad thermal performance and promising substitutes are GaInNAs lasers. In this paper a study of influence of the ridge height on the temperature distribution in GaInNAs laser diodes is presented. To find the temperature distribution the heat conduction equation was solved using the Finite Difference Method and a two-dimensional model of heat flow. The simulation was performed in Mathematica 7.0 varying: the length of the diode, the amount of wells in the active zone and the height of the ridge contact. The thermal resistance (Rt) of the devices was calculated and compared with experimental results reported by other authors, obtaining good agreement. Our results suggest the potential of GaInNAs lasers.
引用
收藏
页码：21 / 27
页数：7
相关论文
共 21 条
[1]  
Alvarez M., 1998, MATEMATICA NUMERICA
[2]   THERMAL-RESISTANCE OF RIDGE-WAVE-GUIDE LASERS MOUNTED UPSIDE DOWN [J].
AMANN, MC .
APPLIED PHYSICS LETTERS, 1987, 50 (01) :4-6
[3]  
Bolz RE, 1973, CRC HDB TABLES APPL
[4]   Static and dynamic characteristics of 1.29-μm GaInNAs ridge-waveguide laser diodes [J].
Borchert, B ;
Egorov, AY ;
Illek, S ;
Riechert, H .
IEEE PHOTONICS TECHNOLOGY LETTERS, 2000, 12 (06) :597-599
[5]   1.29μm GalnNAs multiple quantum-well ridge-waveguide laser diodes with improved performance [J].
Borchert, B ;
Egorov, AY ;
Illek, S ;
Komainda, M ;
Riechert, H .
ELECTRONICS LETTERS, 1999, 35 (25) :2204-2206
[6]   THERMAL-RESISTANCE OF INGAAS/INP LASER-DIODES [J].
BOTH, W ;
PIPREK, J .
JOURNAL OF THERMAL ANALYSIS, 1990, 36 (04) :1441-1456
[7]  
Dyment J. C., 1975, J APPL PHYS, V49, P2683
[8]   1.34μm GaInNAs quantum well lasers with low room-temperature threshold current density [J].
Hopkinson, M. ;
Jin, C. Y. ;
Liu, H. Y. ;
Airey, R. .
ELECTRONICS LETTERS, 2006, 42 (16) :923-924
[9]  
Levinshtein M., 1999, HDB SERIES SEMICONDU, V2
[10]   Ridge-width dependence on high-temperature continuous-wave operation of native oxide-confined InGaAsN triple-quantum-well lasers [J].
Liu, CY ;
Yoon, SF ;
Fan, WJ ;
Uddin, A ;
Yuan, S .
IEEE PHOTONICS TECHNOLOGY LETTERS, 2006, 18 (5-8) :791-793
123