CRACK FORMATION AND THERMAL-STRESS RELAXATION OF GAAS ON SI GROWTH BY METALORGANIC VAPOR-PHASE EPITAXY

被引：14

作者：

ACKAERT, A

BUYDENS, L

LOOTENS, D

VANDAELE, P

DEMEESTER, P

机构：

来源：

APPLIED PHYSICS LETTERS | 1989年 / 55卷 / 21期

关键词：

D O I：

10.1063/1.102056

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2187 / 2189

页数：3

共 15 条

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[10] EPITAXIAL-GROWTH AND MATERIAL PROPERTIES OF GAAS ON SI GROWN BY MOCVD [J].

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