OBSERVATION OF FREE-EXCITONS IN ROOM-TEMPERATURE PHOTOLUMINESCENCE OF GAAS/ALGAAS SINGLE QUANTUM WELLS

被引：37
作者：
FUJIWARA, K
TSUKADA, N
NAKAYAMA, T
机构：
来源：
APPLIED PHYSICS LETTERS | 1988年 / 53卷 / 08期
关键词：
D O I：
10.1063/1.99847
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：675 / 677
页数：3
相关论文
共 16 条
[1]   SUPER-LATTICE BAND-STRUCTURE IN THE ENVELOPE-FUNCTION APPROXIMATION [J].
BASTARD, G .
PHYSICAL REVIEW B, 1981, 24 (10) :5693-5697
[2]  
BASTARD G, 1982, PHYS REV B, V25, P7484
[3]   EVIDENCE FOR EXCITONIC DECAY OF EXCESS CHARGE-CARRIERS IN HIGH-QUALITY GAAS QUANTUM-WELLS AT ROOM-TEMPERATURE [J].
BIMBERG, D ;
CHRISTEN, J ;
WERNER, A ;
KUNST, M ;
WEIMANN, G ;
SCHLAPP, W .
APPLIED PHYSICS LETTERS, 1986, 49 (02) :76-78
[4]  
CASEY HC, 1978, HETEROSTRUCTURE LA A
[5]   FREE-EXCITONS IN ROOM-TEMPERATURE PHOTOLUMINESCENCE OF GAAS-ALXGA1-XAS MULTIPLE QUANTUM WELLS [J].
DAWSON, P ;
DUGGAN, G ;
RALPH, HI ;
WOODBRIDGE, K .
PHYSICAL REVIEW B, 1983, 28 (12) :7381-7383
[6]   EFFECT OF TEMPERATURE ON EXCITON TRAPPING ON INTERFACE DEFECTS IN GAAS QUANTUM WELLS [J].
DELALANDE, C ;
MEYNADIER, MH ;
VOOS, M .
PHYSICAL REVIEW B, 1985, 31 (04) :2497-2498
[7]   CARRIER TRAPPING IN ROOM-TEMPERATURE, TIME-RESOLVED PHOTOLUMINESCENCE OF A GAAS/ALXGA1-XAS MULTIPLE QUANTUM WELL STRUCTURE GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].
FOUQUET, JE ;
SIEGMAN, AE ;
BURNHAM, RD ;
PAOLI, TL .
APPLIED PHYSICS LETTERS, 1985, 46 (04) :374-376
[8]   ROOM-TEMPERATURE PHOTOLUMINESCENCE TIMES IN A GAAS ALXGA1-XAS MOLECULAR-BEAM EPITAXY MULTIPLE QUANTUM WELL STRUCTURE [J].
FOUQUET, JE ;
SIEGMAN, AE .
APPLIED PHYSICS LETTERS, 1985, 46 (03) :280-282
[9]   RECOMBINATION DYNAMICS IN GAAS/ALXGA1-XAS QUANTUM-WELL STRUCTURES [J].
FOUQUET, JE ;
BURNHAM, RD .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1986, 22 (09) :1799-1810
[10]   LINEAR-POLARIZATION EFFECTS IN ANISOTROPIC PHOTOEMISSION FROM GAAS ALAS SHORT-PERIOD SUPERLATTICES [J].
FUJIWARA, K ;
TSUKADA, N ;
NAKAYAMA, T ;
NISHINO, T .
APPLIED PHYSICS LETTERS, 1987, 51 (21) :1717-1719
12