NONDESTRUCTIVE TOPOGRAPHIC EVALUATION OF ION-IMPLANTED LAYERS ON GAAS SUBSTRATES BY OPTICAL-ABSORPTION

被引：1
|
作者：
WINDSCHEIF, J
WETTLING, W
JANTZ, W
机构：
[1] Fraunhofer-Inst fuer Angewandte, Festkoerperphysik, Freiburg, West, Ger, Fraunhofer-Inst fuer Angewandte Festkoerperphysik, Freiburg, West Ger
来源：
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 1988年 / 47卷 / 02期
关键词：
LIGHT - Absorption - NONDESTRUCTIVE EXAMINATION;
D O I：
10.1007/BF00618874
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
It is demonstrated that ion implanted layers can be analyzed prior to annealing by measuring the sub-bandgap optical absorption of the damaged lattice. The absolute value and lateral homogeneity of the implantation dose can be measured. The method is fast, nondestructive and compares favorably with existing measurement techniques.
引用
收藏
页码：115 / 118
页数：4
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