PICOSECOND LUMINESCENCE OF EXCITONS LOCALIZED BY DISORDER IN CDSXSE1-X

被引：56

作者：

SHEVEL, S

FISCHER, R

GOBEL, EO

NOLL, G

THOMAS, P

KLINGSHIRN, C

机构：

[1] UNIV MARBURG, FACHBEREICH PHYS, D-3550 MARBURG, GERMANY

[2] UNIV FRANKFURT, INST PHYS, D-6000 FRANKFURT, GERMANY

来源：

JOURNAL OF LUMINESCENCE | 1987年 / 37卷 / 01期

关键词：

D O I：

10.1016/0022-2313(87)90181-5

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

引用

页码：45 / 50

页数：6

共 28 条

[1] FLUORESCENCE LINE NARROWING, LOCALIZED EXCITON-STATES, AND SPECTRAL DIFFUSION IN THE MIXED SEMICONDUCTOR CDSXSE1-X [J].

COHEN, E ;

STURGE, MD .

PHYSICAL REVIEW B, 1982, 25 (06) :3828-3840

[2] EXCITONIC MOBILITY EDGE IN GAASXP1-X [J].

GERSHONI, D ;

COHEN, E ;

RON, A .

PHYSICAL REVIEW LETTERS, 1986, 56 (20) :2211-2214

[3]

GOBEL EO, 1982, PHYS REV LETT, V18, P1277

[4] COMPOSITIONAL DISORDER-INDUCED BROADENING FOR FREE EXCITONS IN II-VI SEMICONDUCTING MIXED-CRYSTALS [J].

GOEDE, O ;

JOHN, L ;

HENNIG, D .

PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1978, 89 (02) :K183-K186

[5] HOPPING THEORY OF BAND-TAIL RELAXATION IN DISORDERED SEMICONDUCTORS [J].

GRUNEWALD, M ;

MOVAGHAR, B ;

POHLMANN, B ;

WURTZ, D .

PHYSICAL REVIEW B, 1985, 32 (12) :8191-8196

[6] GROWTH BY MOLECULAR-BEAM EPITAXY AND CHARACTERIZATION OF HIGH-PURITY GAAS AND ALGAAS [J].

HEIBLUM, M ;

MENDEZ, EE ;

OSTERLING, L .

JOURNAL OF APPLIED PHYSICS, 1983, 54 (12) :6982-6988

[7] LIFETIMES OF BOUND EXCITONS IN CDS [J].

HENRY, CH ;

NASSAU, K .

PHYSICAL REVIEW B, 1970, 1 (04) :1628-&

[8]

HOGER R, 1984, J PHYS C SOLID STATE, V17, P2905

[9]

INOKUTI M, 1965, J CHEM PHYS, V43, P1973

[10] SUBNANOSECOND SPECTROSCOPY OF DISORDER-LOCALIZED EXCITONS IN CDS0.53SE0.47 [J].

KASH, JA ;

RON, A ;

COHEN, E .

PHYSICAL REVIEW B, 1983, 28 (10) :6147-6150

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