MAGNETOPHOTOLUMINESCENCE OF BIAXIALLY COMPRESSED INASSB QUANTUM-WELLS

被引：34
作者：
KURTZ, SR
BIEFELD, RM
机构：
[1] Sandia National Laboratories, Albuquerque
来源：
APPLIED PHYSICS LETTERS | 1995年 / 66卷 / 03期
关键词：
D O I：
10.1063/1.114214
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Heterostructures with biaxially compressed InAsSb are being considered as active regions for midwave infrared diode lasers. Quantum wells of biaxially compressed InAs1-xSbx (x≈0.09) in unstrained InAs were characterized using magnetophotoluminescence. The quantum size shift of the photoluminescence for a series of quantum wells produced an estimate of the conduction band offset. In magnetic field studies, the holes in the strained quantum wells exhibited a decrease in effective mass, approaching that of the electrons. A type I band offset was observed for these InAsSb/InAs heterostructures. Throughout this study, magnetoexcitonic behavior is observed; our analysis indicates that the exciton binding energy increases with quantum confinement. © 1995 American Institute of Physics.
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页码：364 / 366
页数：3
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