CONSERVATION EQUATIONS FOR HOT CARRIERS .1. TRANSPORT MODELS

被引:25
作者
GRUZINSKIS, V
STARIKOV, E
SHIKTOROV, P
机构
[1] Semiconductor Physics Institute, Vilnius 2600
关键词
D O I
10.1016/0038-1101(93)90124-9
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Kinetic and hydrodynamic models for simulation of carrier heating and transport in bulk semiconductors and semiconductor devices are considered. In the framework of the kinetic approach based on the single-particle Monte Carlo simulation main attention is paid to the hydrodynamic model parameters as well as to the time- and frequency-dependences of the hot carrier linear response calculations. In the framework of the hydrodynamic approach the drift velocity and mean energy conservation equations are investigated under the single electron gas approximation. Possible extensions as well as widely used simplifications of this model such as the energy transport model, the local energy model, the extended drift-diffusion formalism and the drift-diffusion approximation are considered.
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收藏
页码:1055 / 1066
页数:12
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