APPLICATION OF AN ELECTROCHEMICAL ARSINE GENERATOR ON A HIGH THROUGHPUT MOVPE REACTOR

Quality GaAs buffer layers have been grown in a high throughput MOVPE reactor using a novel electrochemical arsine generator which reduces the required quantity of arsine gas on site to less than 0.1 lbs. Hall, secondary ion mass spectrometry (SIMS), photoluminescence (PL), and deep level transient spectroscopy (DLTS) measurements reveal material properties comparable to those obtained with high purity tank arsine. Background carrier concentrations in the low 10(14) cm-3 range were observed. AlxGa1-xAs layers grown using generator arsine were shown by SIMS to have the same oxygen content as layers grown previously in this reactor using tank arsine but are higher than reported elsewhere. The oxygen contamination of AlxGa1-xAs was observed to decrease with the addition of an arsine purifier. Preliminary observations on the reproducibility of generator arsine are presented.