HEAVY ARSENIC DOPING OF SILICON GROWN BY ATMOSPHERIC-PRESSURE CHEMICAL VAPOR-DEPOSITION AT LOW-TEMPERATURES

被引：21
作者：
AGNELLO, PD
SEDGWICK, TO
GOORSKY, MS
COTTE, J
机构：
来源：
APPLIED PHYSICS LETTERS | 1992年 / 60卷 / 04期
关键词：
D O I：
10.1063/1.106632
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Arsenic doping of epitaxial grown Si over the temperature range from 850-degrees-C to 550-degrees-C was investigated in an ultraclean atmospheric-pressure chemical vapor deposition reactor. Growth was carried out from dichlorosilane (DCS) in H-2 carrier gas. Arsenic could be incorporated into single crystal silicon at levels approaching 10 at. %. Carrier concentrations exceeding 1 x 10(20)/cm3 were obtained for the as-grown films. The material remained single-crystalline, as measured by ion channeling and cross-section transmission electron microscopy, and exhibited excellent surface morphology with no Hillock formation observed. AsH3 dramatically enhanced the growth rate of Si at lower temperatures.
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页码：454 / 456
页数：3
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