INCORPORATION OF BORON DURING THE GROWTH OF GAAS SINGLE-CRYSTALS

被引：15

作者：

HOPKINS, CG ^{[1
]}

DELINE, VR ^{[1
]}

BLATTNER, RJ ^{[1
]}

EVANS, CA ^{[1
]}

MAGEE, TJ ^{[1
]}

机构：

[1] ADV RES & APPLICAT CORP,SUNNYVALE,CA 94086

来源：

APPLIED PHYSICS LETTERS | 1980年 / 36卷 / 12期

关键词：

D O I：

10.1063/1.91393

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：989 / 990

页数：2

共 9 条

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EVANS, CA ;

DELINE, VR ;

SIGMON, TW ;

LIDOW, A .

APPLIED PHYSICS LETTERS, 1979, 35 (03) :291-293

[2] IMPLANTATION OF SHALLOW IMPURITIES IN CR-DOPED SEMI-INSULATING GAAS [J].

FAVENNEC, PN ;

HARIDON, HL .

APPLIED PHYSICS LETTERS, 1979, 35 (09) :699-701

[3]

HUBER AM, 1979, APPL PHYS LETT, V34, P859

[4] ALLOYING OF AU LAYERS AND REDISTRIBUTION OF CR IN GAAS [J].

MAGEE, TJ ;

PENG, J ;

HONG, JD ;

DELINE, VR ;

EVANS, CA .

APPLIED PHYSICS LETTERS, 1979, 35 (08) :615-617

[5]

MULLINS JB, 1968, J CRYST GROWTH, V13, P640

[6] INVESTIGATION OF COMPENSATION IN IMPLANTED N-GAAS [J].

RAO, EVK ;

DUHAMEL, N ;

FAVENNEC, PN ;

LHARIDON, H .

JOURNAL OF APPLIED PHYSICS, 1978, 49 (07) :3898-3905

[7]

SWIGGARD EM, 1977, I PHYS C SER B, V33, P23

[8]

SWIGGARD EM, 1977, I PHYS C SER B, V33, P28

[9] CHROMIUM CONCENTRATIONS, DEPTH DISTRIBUTIONS, AND DIFFUSION-COEFFICIENT IN BULK AND EPITAXIAL GAAS AND IN SI [J].

WILSON, RG ;

VASUDEV, PK ;

JAMBA, DM ;

EVANS, CA ;

DELINE, VR .

APPLIED PHYSICS LETTERS, 1980, 36 (03) :215-217

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