SHIFT OF GATE THRESHOLD VOLTAGE OF MOS TRANSISTORS DNE TO INTRODUCTION OF SHALLOW IMPURITIES

被引：26
作者：
TANAKA, T
机构：
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS | 1971年 / 10卷 / 01期
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D O I：
10.1143/JJAP.10.84
中图分类号：
O59 [应用物理学];
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页码：84 / +
页数：1
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