LOW-ENERGY POSITRON CHANNELING IN SILICON

被引：6

作者：

LOGAN, LR

SCHULTZ, PJ

DAVIES, JA

JACKMAN, TE

机构：

[1] MCMASTER UNIV,DEPT ENGN PHYS,HAMILTON L8S 4L8,ONTARIO,CANADA

[2] NATL RES COUNCIL CANADA,MICROSTRUCT SCI LAB,OTTAWA K1A 0R6,ONTARIO,CANADA

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1988年 / 33卷 / 1-4期

关键词：

D O I：

10.1016/0168-583X(88)90512-5

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

引用

页码：58 / 61

页数：4

共 50 条

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