LOW-ENERGY POSITRON CHANNELING IN SILICON

被引：6
作者：
LOGAN, LR
SCHULTZ, PJ
DAVIES, JA
JACKMAN, TE
机构：
[1] MCMASTER UNIV,DEPT ENGN PHYS,HAMILTON L8S 4L8,ONTARIO,CANADA
[2] NATL RES COUNCIL CANADA,MICROSTRUCT SCI LAB,OTTAWA K1A 0R6,ONTARIO,CANADA
来源：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1988年 / 33卷 / 1-4期
关键词：
D O I：
10.1016/0168-583X(88)90512-5
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
引用
收藏
页码：58 / 61
页数：4
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