LOW-ENERGY POSITRON CHANNELING IN SILICON

被引：6
|
作者：
LOGAN, LR
SCHULTZ, PJ
DAVIES, JA
JACKMAN, TE
机构：
[1] MCMASTER UNIV,DEPT ENGN PHYS,HAMILTON L8S 4L8,ONTARIO,CANADA
[2] NATL RES COUNCIL CANADA,MICROSTRUCT SCI LAB,OTTAWA K1A 0R6,ONTARIO,CANADA
来源：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1988年 / 33卷 / 1-4期
关键词：
D O I：
10.1016/0168-583X(88)90512-5
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
引用
收藏
页码：58 / 61
页数：4
相关论文
共 50 条
  • [1] Low energy positron channeling in silicon
    Logan, L.R.
    Schultz, Peter J.
    Davies, J.A.
    Jackman, T.E.
    Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 1988, B33 (1-4) : 58 - 61
  • [2] A LOW-ENERGY LIMIT TO BORON CHANNELING IN SILICON
    LEVER, RF
    BRANNON, KW
    JOURNAL OF APPLIED PHYSICS, 1991, 69 (09) : 6369 - 6372
  • [3] CRITICAL CHANNELING ANGLES OF LOW-ENERGY IONS IN SILICON
    GRAHMANN, H
    FEUERSTEIN, A
    KALBITZER, S
    RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1976, 29 (02): : 117 - 119
  • [4] CHANNELING EFFECT OF LOW-ENERGY BORON IMPLANT IN (100) SILICON
    LIU, TM
    OLDHAM, WG
    IEEE ELECTRON DEVICE LETTERS, 1983, 4 (03) : 59 - 62
  • [5] Isotopic mass effects for low-energy channeling in a silicon crystal
    Zheng, Li-Ping
    Zhu, Zhi-Yuan
    Li, Yong
    Yan, Long
    Zhu, De-Zhang
    RADIATION EFFECTS AND DEFECTS IN SOLIDS, 2011, 166 (11): : 861 - 865
  • [6] Critical angles and low-energy limits to ion channeling in silicon
    Hobler, G
    RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1996, 139 (01): : 21 - 85
  • [7] ENERGY-LOSS OF LOW-ENERGY PROTONS CHANNELING IN SILICON-CRYSTALS
    MELVIN, JD
    TOMBRELLO, TA
    RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1975, 26 (1-2): : 113 - 126
  • [8] LOW-ENERGY ANTIPROTON CHANNELING
    BALASHOVA, LL
    GRANKINA, TV
    KABACHNIK, NM
    POKHIL, GP
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1990, 48 (1-4): : 156 - 158
  • [9] BIG CHANNELING EFFECTS AT LOW-ENERGY ION-IMPLANTATION IN SILICON
    BOLLMANN, J
    KLOSE, H
    MERTENS, A
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1986, 97 (02): : K135 - K139
  • [10] Comment on "Isotopic mass effects for low-energy channeling in a silicon crystal"
    Zhang, Zhu Lin
    Zhang, Lai
    Padmanabhan, Karur R.
    RADIATION EFFECTS AND DEFECTS IN SOLIDS, 2011, 166 (11): : 866 - 869
12345