POTENTIAL OF GOLD OVERLAYER ON N-GAP PHOTOELECTRODES

被引:26
作者
WILSON, RH [1 ]
HARRIS, LA [1 ]
GERSTNER, ME [1 ]
机构
[1] GE,CORP RES & DEV,SCHENECTADY,NY 12301
关键词
D O I
10.1149/1.2133535
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
引用
收藏
页码:1233 / 1234
页数:2
相关论文
共 3 条
[1]  
Good Will Fund, COMMUNICATION
[2]  
NAKATO Y, 1976, BER BUNSEN PHYS CHEM, V80, P1002, DOI 10.1002/bbpc.19760801015
[3]   PHOTO-ELECTROCHEMICAL BEHAVIORS OF SEMICONDUCTOR ELECTRODES COATED WITH THIN METAL-FILMS [J].
NAKATO, Y ;
OHNISHI, T ;
TSUBOMURA, H .
CHEMISTRY LETTERS, 1975, (08) :883-886