SPIN-LATTICE RELAXATION AT HIGH-TEMPERATURES IN HEAVILY DOPED N-TYPE SILICON

被引：8
作者：
OCHIAI, Y
MATSUURA, E
机构：
来源：
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1978年 / 45卷 / 02期
关键词：
D O I：
10.1002/pssa.2210450246
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：K101 / K104
页数：4
相关论文
共 7 条
[1]  
HOLCOMB DF, 1968, REV MOD PHYS, V40, P815
[2]   EFFECT OF DOPING ON ELECTRON SPIN RESONANCE IN PHOSPHORUS DOPED SILICON .2. [J].
KODERA, H .
JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1966, 21 (06) :1040-&
[3]   SPIN-LATTICE RELAXATION OF CONDUCTION ELECTRONS IN SILICON [J].
LANCASTER, G ;
VANWYK, JA ;
SCHNEIDER, EE .
PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1964, 84 (5371) :19-&
[4]   ESR IN HEAVILY DOPED N-TYPE SILICON NEAR A METAL - NONMETAL TRANSITION [J].
OCHIAI, Y ;
MATSUURA, E .
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1976, 38 (01) :243-252
[5]  
OCHIAI Y, 1975, PHYS STATUS SOLIDI A, V27, pK89, DOI 10.1002/pssa.2210270254
[6]   ABSOLUTE SPIN SUSCEPTIBILITIES AND OTHER ESR PARAMETERS OF HEAVILY DOPED TYPE SILICON .1. METALLIC SAMPLES [J].
QUIRT, JD ;
MARKO, JR .
PHYSICAL REVIEW B, 1972, 5 (05) :1716-&
[7]  
YAFET Y, 1963, SOLID STATE PHYS, V14, P81
1