HYSTERESIS EFFECTS IN SEMICONDUCTOR-METAL TRANSITION OF CR-DOPED VO2

被引:12
作者
REYES, JM [1 ]
MARKO, JR [1 ]
SAYER, M [1 ]
机构
[1] QUEENS UNIV,DEPT PHYS,KINGSTON,ONTARIO,CANADA
关键词
D O I
10.1016/0038-1098(73)90008-2
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
引用
收藏
页码:1953 / 1957
页数:5
相关论文
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