HYSTERESIS EFFECTS IN SEMICONDUCTOR-METAL TRANSITION OF CR-DOPED VO2

被引：12

作者：

REYES, JM ^{[1
]}

MARKO, JR ^{[1
]}

SAYER, M ^{[1
]}

机构：

[1] QUEENS UNIV,DEPT PHYS,KINGSTON,ONTARIO,CANADA

来源：

SOLID STATE COMMUNICATIONS | 1973年 / 13卷 / 12期

关键词：

D O I：

10.1016/0038-1098(73)90008-2

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：1953 / 1957

页数：5

共 16 条

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[10] STRUCTURAL ASPECTS OF METAL-INSULATOR TRANSITIONS IN CR-DOPED VO2 [J].

MAREZIO, M ;

MCWHAN, B ;

DERNIER, PD ;

REMEIKA, JP .

PHYSICAL REVIEW B-SOLID STATE, 1972, 5 (07) :2541-&

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