LASING ACTION OF GA0.67IN0.33AS/GAINASP/INP TENSILE-STRAINED QUANTUM-BOX LASER

被引：52

作者：

HIRAYAMA, H

MATSUNAGA, K

ASADA, M

SUEMATSU, Y

机构：

[1] Tokyo Institute of Technology, Meguro-ku, Tokyo 152

来源：

ELECTRONICS LETTERS | 1994年 / 30卷 / 02期

关键词：

SEMICONDUCTOR LASERS; SEMICONDUCTOR QUANTUM DOTS;

D O I：

10.1049/el:19940082

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The lasing action of a Ga0.67In0.33As/GaInAsP/InP quantum-box (QB) laser with single-layer tensile-strained (TS)-QB active region is demonstrated for the first time. The fabricated QB is 30nm in diameter and 12nm thick with a period of 70nm. The sample was fabricated by using two-step MOVPE growth, electron-beam-exposure (EBX) direct writing, and wet-chemical etching processes. The threshold current density was 7.6KA/cm(2) at 77K with pulse current injection.

引用

页码：142 / 143

页数：2

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