EXPLOITING ENERGY-DEPENDENT PHOTOEMISSION IN SI D-METAL INTERFACES - THE SI(111)-PD CASE

被引：40

作者：

ABBATI, I ^{[1
]}

ROSSI, G ^{[1
]}

LINDAU, I ^{[1
]}

SPICER, WE ^{[1
]}

机构：

[1] STANFORD UNIV, STANFORD ELECTR LABS, STANFORD, CA 94305 USA

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1981年 / 19卷 / 03期

关键词：

D O I：

10.1116/1.571077

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：636 / 640

页数：5

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[9] REACTIVE SCHOTTKY-BARRIER FORMATION - THE PD-SI INTERFACE [J].

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[10] MICROSCOPIC COMPOUND FORMATION AT THE PD-SI(111) INTERFACE [J].

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