ELECTROREFLECTANCE STUDY OF INGAASP QUATERNARY ALLOYS LATTICE MATCHED TO INP

被引：40
作者：
YAMAZOE, Y
NISHINO, T
HAMAKAWA, Y
机构：
来源：
IEEE JOURNAL OF QUANTUM ELECTRONICS | 1981年 / 17卷 / 02期
关键词：
D O I：
10.1109/JQE.1981.1071081
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
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页码：139 / 144
页数：6
相关论文
共 36 条
[1]   INTERBAND MAGNETOABSORPTION OF IN0.53GA0.47AS [J].
ALAVI, K ;
AGGARWAL, RL ;
GROVES, SH .
PHYSICAL REVIEW B, 1980, 21 (03) :1311-1315
[2]   OSCILLATORY MAGNETO-TRANSMISSION OF IN1-XGAXASYP1-Y ALLOYS [J].
ALAVI, K ;
AGGARWAL, RL ;
GROVES, SH .
JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, 1979, 11 (1-3) :136-138
[3]   ELECTROREFLECTANCE AND BAND-STRUCTURE OF GAXIN1-XP ALLOYS [J].
ALIBERT, C ;
CHEVALLI.J ;
BORDURE, G ;
LAUGIER, A .
PHYSICAL REVIEW B, 1972, 6 (04) :1301-&
[4]   1.11-1.67 MU-M (100) GAINASP-INP INJECTION-LASERS PREPARED BY LIQUID-PHASE EPITAXY [J].
ARAI, S ;
SUEMATSU, Y ;
ITAYA, Y .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1980, 16 (02) :197-205
[5]   HIGH-RESOLUTION INTERBAND-ENERGY MEASUREMENTS FROM ELECTROREFLECTANCE SPECTRA [J].
ASPNES, DE ;
ROWE, JE .
PHYSICAL REVIEW LETTERS, 1971, 27 (04) :188-&
[6]   THIRD-DERIVATIVE MODULATION SPECTROSCOPY WITH LOW-FIELD ELECTROREFLECTANCE [J].
ASPNES, DE .
SURFACE SCIENCE, 1973, 37 (01) :418-442
[7]   INTERBAND MASSES OF HIGHER INTERBAND CRITICAL-POINTS IN GE [J].
ASPNES, DE .
PHYSICAL REVIEW LETTERS, 1973, 31 (04) :230-233
[8]   SCHOTTKY-BARRIER ELECTROREFLECTANCE-APPLICATION TO GAAS [J].
ASPNNES, DE ;
STUDNA, AA .
PHYSICAL REVIEW B, 1973, 7 (10) :4605-4652
[9]  
BEROLO O, 1972, 11TH P INT C PHYS SE, P1420
[10]   CYCLOTRON-RESONANCE IN N-TYPE IN1-XGAXASYP1-Y [J].
BRENDECKE, H ;
STORMER, HL ;
NELSON, RJ .
APPLIED PHYSICS LETTERS, 1979, 35 (10) :772-774
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