RECTIFICATION IN HEAVILY DOPED P-TYPE GAAS/ALAS HETEROJUNCTIONS - COMMENT

被引：1

作者：

ZEEB, E

EBELING, KJ

机构：

[1] Universität Ulm, Abteilung Optoelektronik, 7900 Ulm, Oberer Eselsberg

来源：

JOURNAL OF APPLIED PHYSICS | 1992年 / 71卷 / 11期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1063/1.350514

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In his recent paper "Rectification in heavily doped p-type GaAs/AlAs heterojunctions" [J. Appl. Phys. 70, 1081 (1991)] Yoffe presented calculations of barrier heights and current-voltage characteristics. Unfortunately, he adopted a typographical error in his basic equations. In this comment we show that significant differences in barrier heights and currents across heterojunctions arise, using the corrected expression for the calculations.

引用

页码：5729 / 5729

页数：1