STRUCTURAL RELAXATION AND ORDER IN ION-IMPLANTED SI AND GE

被引：43

作者：

FORTNER, J

LANNIN, JS

机构：

来源：

PHYSICAL REVIEW B | 1988年 / 37卷 / 17期

关键词：

D O I：

10.1103/PhysRevB.37.10154

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：10154 / 10158

页数：5

共 19 条

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[8]

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[10] DYNAMIC STRUCTURE FACTOR OF AMORPHOUS-GERMANIUM [J].

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