THE INFLUENCE OF THE THERMAL-EQUILIBRIUM APPROXIMATION ON THE ACCURACY OF CLASSICAL TWO-DIMENSIONAL NUMERICAL MODELING OF SILICON SUBMICROMETER MOS-TRANSISTORS

被引：97
作者：
MEINERZHAGEN, B
ENGL, WL
机构：
[1] Inst fuer Theoretische, Elektrotechnik, Aachen, West Ger, Inst fuer Theoretische Elektrotechnik, Aachen, West Ger
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1988年 / 35卷 / 05期
关键词：
D O I：
10.1109/16.2514
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
24
引用
收藏
页码：689 / 697
页数：9
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