GA0.47IN0.53AS/INP SUPERLATTICES GROWN BY CHEMICAL BEAM EPITAXY - ABSORPTION, PHOTOLUMINESCENCE EXCITATION, AND PHOTOCURRENT SPECTROSCOPIES

被引:25
|
作者
TSANG, WT [1 ]
SCHUBERT, EF [1 ]
CHU, SNG [1 ]
TAI, K [1 ]
SAUER, R [1 ]
机构
[1] AT&T BELL LABS,MURRAY HILL,NJ 07974
关键词
D O I
10.1063/1.98153
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:540 / 542
页数:3
相关论文
共 50 条
  • [2] Beryllium doping for Ga0.47In0.53As/InP quantum wells by chemical beam epitaxy (CBE)
    Uchida, Takashi
    Uchida, Toshikazu
    Yokouchi, Noriyuki
    Miyamoto, Tomoyuki
    Koyama, Fumio
    Iga, Kenichi
    Japanese Journal of Applied Physics, Part 2: Letters, 1991, 30 (7 B):
  • [3] CHEMICAL BEAM EPITAXY OF GA0.47IN0.53AS/INP QUANTUM-WELLS AND HETEROSTRUCTURE DEVICES
    TSANG, WT
    JOURNAL OF CRYSTAL GROWTH, 1987, 81 (1-4) : 261 - 269
  • [4] TWO-DIMENSIONAL ELECTRON-GAS IN A GA0.47IN0.53AS/INP HETEROJUNCTION GROWN BY CHEMICAL BEAM EPITAXY
    TSANG, WT
    CHANG, AM
    DITZENBERGER, JA
    TABATABAIE, N
    APPLIED PHYSICS LETTERS, 1986, 49 (15) : 960 - 962
  • [5] EXTREMELY HIGH-QUALITY GA0.47IN0.53AS/INP QUANTUM-WELLS GROWN BY CHEMICAL BEAM EPITAXY
    TSANG, WT
    SCHUBERT, EF
    APPLIED PHYSICS LETTERS, 1986, 49 (04) : 220 - 222
  • [6] RAMAN-SCATTERING IN GA0.47IN0.53AS/INP SUPERLATTICES GROWN BY METALORGANIC VAPOR-PHASE EPITAXY
    DAVEY, ST
    SPURDENS, PC
    WAKEFIELD, B
    NELSON, AW
    APPLIED PHYSICS LETTERS, 1987, 51 (10) : 758 - 760
  • [7] INP/IN0.53GA0.47AS HETEROJUNCTION PHOTOTRANSISTORS GROWN BY CHEMICAL BEAM EPITAXY
    CAMPBELL, JC
    TSANG, WT
    QUA, GJ
    IEEE ELECTRON DEVICE LETTERS, 1987, 8 (04) : 171 - 173
  • [8] HIGH-PERFORMANCE GA0.47IN0.53AS PHOTOCONDUCTIVE DETECTORS GROWN BY CHEMICAL BEAM EPITAXY
    ANTREASYAN, A
    TSANG, WT
    APPLIED PHYSICS LETTERS, 1986, 49 (06) : 322 - 324
  • [9] BERYLLIUM DOPING FOR GA0.47IN0.53AS/INP QUANTUM-WELLS BY CHEMICAL BEAM EPITAXY (CBE)
    UCHIDA, T
    UCHIDA, T
    YOKOUCHI, N
    MIYAMOTO, T
    KOYAMA, F
    IGA, K
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1991, 30 (7B): : L1224 - L1226
  • [10] GROWTH OF GA0.47IN0.53AS INP DOUBLE-HETEROSTRUCTURE WAFERS BY CHEMICAL BEAM EPITAXY (CBE)
    UCHIDA, T
    UCHIDA, TK
    MISE, K
    YOKOUCHI, N
    KOYAMA, F
    IGA, K
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1990, 29 (09): : 1771 - 1772