AN AG-GAAS SCHOTTKY-BARRIER ULTRAVIOLET DETECTOR

被引：25

作者：

BAERTSCH, RD

RICHARDSON, JR

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1969年 / 40卷 / 01期

关键词：

D O I：

10.1063/1.1657037

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：229 / +

页数：1

共 12 条

[1] OPTICAL MICROPROBE RESPONSE OF GAAS DIODES [J].

ASHLEY, KL ;

BIARD, JR .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1967, ED14 (08) :129-&

[2]

BAERTSCH RD, TO BE PUBLISHED

[3] OPTICAL PROPERTIES OF AG AND CU [J].

EHRENREICH, H ;

PHILIPP, HR .

PHYSICAL REVIEW, 1962, 128 (04) :1622-+

[4]

HEAVENS OS, 1955, OPTICAL PROPERTIES T, P80

[5]

HEAVENS OS, 1955, OPTICAL PROPERTIES T, P74

[6] OPTICAL CONSTANTS OF VACUUM-EVAPORATED SILVER FILMS [J].

HUEBNER, RH ;

HAMM, RN ;

MACRAE, RA ;

ARAKAWA, ET .

JOURNAL OF THE OPTICAL SOCIETY OF AMERICA, 1964, 54 (12) :1434-&

[7] OPTICAL PROPERTIES OF SEMICONDUCTORS [J].

PHILIPP, HR ;

EHRENREICH, H .

PHYSICAL REVIEW, 1963, 129 (04) :1550-&

[8] SCHOTTKY BARRIER PHOTODIODES WITH ANTIREFLECTION COATING [J].

SCHNEIDE.MV .

BELL SYSTEM TECHNICAL JOURNAL, 1966, 45 (09) :1611-&

[9] BARRIER HEIGHT STUDIES ON METAL-SEMICONDUCTOR SYSTEMS [J].

SPITZER, WG ;

MEAD, CA .

JOURNAL OF APPLIED PHYSICS, 1963, 34 (10) :3061-+

[10] CHEMICAL VAPOUR DEPOSITION PROMOTED BY RF DISCHARGE [J].

STERLING, HF ;

SWANN, RCG .

SOLID-STATE ELECTRONICS, 1965, 8 (08) :653-&

← 1 2 →