1-V POWER-SUPPLY HIGH-SPEED DIGITAL CIRCUIT TECHNOLOGY WITH MULTITHRESHOLD-VOLTAGE CMOS

被引:611
作者
MUTOH, S [1 ]
DOUSEKI, T [1 ]
MATSUYA, Y [1 ]
AOKI, T [1 ]
SHIGEMATSU, S [1 ]
YAMADA, J [1 ]
机构
[1] NIPPON TELEGRAPH & TEL PUBL CORP, LSI LABS, PROJECT TEAM 4, KANAGAWA 24301, JAPAN
关键词
D O I
10.1109/4.400426
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
1-V power supply high-speed low-power digital circuit technology with 0.5-mu m multithreshold-voltage CMOS (MTCMOS) is proposed, This technology features both low-threshold voltage and high-threshold voltage MOSFET's in a single LSI. The low-threshold voltage MOSFET's enhance speed performance at a low supply voltage of 1 V or less, while the high-threshold voltage MOSFET's suppress the stand-by leakage current during the sleep period, This technology has brought about logic gate characteristics of a 1.7-ns propagation delay time and 0.3-mu-W/MHz/gate power dissipation with a standard load. In addition, an MTCMOS standard cell library has been developed so that conventional CAD tools can be used to lay out low-voltage LSI's, To demonstrate MTCMOS's effectiveness, a PLL LSI based on standard cells was designed as a carrying vehicle, 18-MHz operation at 1 V was achieved using a 0.5-mu m CMOS process.
引用
收藏
页码:847 / 854
页数:8
相关论文
共 8 条
  • [1] BRODERSEN R, 1993, ISSCC 93 TECH DIG, P168
  • [2] LOW-POWER CMOS DIGITAL DESIGN
    CHANDRAKASAN, AP
    SHENG, S
    BRODERSEN, RW
    [J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1992, 27 (04) : 473 - 484
  • [3] SWITCHED-SOURCE-IMPEDANCE CMOS CIRCUIT FOR LOW STANDBY SUBTHRESHOLD CURRENT GIGA-SCALE LSIS
    HORIGUCHI, M
    SAKATA, T
    ITOH, K
    [J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1993, 28 (11) : 1131 - 1135
  • [4] ISHIKAWA M, 1992, P IEEE VTC, P752
  • [5] SUBTHRESHOLD CURRENT REDUCTION FOR DECODED-DRIVER BY SELF-REVERSE BIASING
    KAWAHARA, T
    HORIGUCHI, M
    KAWAJIRI, Y
    KITSUKAWA, G
    KURE, T
    AOKI, M
    [J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1993, 28 (11) : 1136 - 1144
  • [6] MUTOH S, 1993, SEP P IEEE INT ASIC, P186
  • [7] SHIMOHIGASHI K, 1993, IEEE J SOLID-ST CIRC, V28, P408, DOI 10.1109/4.210022
  • [8] 1992, SIA SEMICONDUCTOR TE