HIGH-TEMPERATURE THERMAL-STABILITY OF PLASMA-DEPOSITED TUNGSTEN NITRIDE SCHOTTKY CONTACTS TO GAAS

被引：17

作者：

LEE, CW ^{[1
]}

KIM, YT ^{[1
]}

机构：

[1] KOREA ADV INST SCI & TECHNOL,SEMICONDUCTOR MAT LAB,SEOUL,SOUTH KOREA

来源：

SOLID-STATE ELECTRONICS | 1995年 / 38卷 / 03期

关键词：

D O I：

10.1016/0038-1101(94)00148-9

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Electrical and physical properties of plasma enhanced chemical vapor deposited tungsten nitride (W67N33) Schottky contacts to GaAs are investigated at the rapid thermal annealing (RTA) temperature of 500-1000 degrees C for 30 s. The cross-sectional transmission electron microscopy and second ion mass spectroscopy reveal that the W67N33 Schottky contacts to GaAs maintains the integrity of interface during RTA at 1000 degrees C for 30 s without any reaction of W-As or interdiffusion phenomena. Barrier heights and ideality factors for as-deposited W67N33 contacts to GaAs are 0.86 eV and 1.04, which are changed to 0.72 eV and 1.128 after RTA at 1000 degrees C for 30 s.

引用

页码：679 / 682

页数：4

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