LASER-INDUCED MELT DYNAMICS OF SI AND SILICA

被引：56

作者：

BOSCH, MA

LEMONS, RA

机构：

来源：

PHYSICAL REVIEW LETTERS | 1981年 / 47卷 / 16期

关键词：

D O I：

10.1103/PhysRevLett.47.1151

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：1151 / 1155

页数：5

共 17 条

[1] INDUCED ABSORPTION IN SILICON UNDER INTENSE LASER EXCITATION - EVIDENCE FOR A SELF-CONFINED PLASMA [J].

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LO, HW ;

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COMPAAN, A .

PHYSICAL REVIEW LETTERS, 1981, 46 (25) :1640-1643

[2] SEGREGATION EFFECTS IN CU-IMPLANTED SI AFTER LASER-PULSE MELTING [J].

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CAMPISANO, SU ;

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[3] LASER ANNEALING OF DAMAGED SILICON COVERED WITH A METAL-FILM - TEST FOR EPITAXIAL-GROWTH FROM THE MELT [J].

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COHEN, C ;

DESALVO, A ;

DRIGO, AV .

PHYSICAL REVIEW LETTERS, 1981, 46 (02) :156-159

[4] THEORETICAL CONSIDERATIONS REGARDING PULSED CO2-LASER ANNEALING OF SILICON [J].

BHATTACHARYYA, A ;

STREETMAN, BG .

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[5]

BOSCH MA, 1981, B AM PHYS SOC, V26, P420

[6]

CELLER GK, 1979, LASER SOLID INTERACT, P381

[7] LASER-HEATING AND MELTING OF THIN-FILMS ON LOW-CONDUCTIVITY SUBSTRATES [J].

GHEZ, RA ;

LAFF, RA .

JOURNAL OF APPLIED PHYSICS, 1975, 46 (05) :2103-2110

[8]

Glazov V. M., 1969, LIQUID SEMICONDUCTOR

[9] SOME FEATURES OF LASER ANNEALING OF IMPLANTED SILICON LAYERS [J].

KHAIBULLIN, IB ;

SHTYRKOV, EI ;

ZARIPOV, MM ;

BAYAZITOV, RM ;

GALJAUTDINOV, MF .

RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1978, 36 (3-4) :225-233

[10] TIME-RESOLVED OPTICAL-TRANSMISSION OF PULSED LASER-IRRADIATED SILICON [J].

LEE, MC ;

LO, HW ;

AYDINLI, A ;

COMPAAN, A .

APPLIED PHYSICS LETTERS, 1981, 38 (07) :499-501

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