GROWTH OF AGGAS2 SINGLE-CRYSTALS BY CHEMICAL-TRANSPORT WITH HALOGEN

被引：14
作者：
NODA, Y
KURASAWA, T
FURUKAWA, Y
MASUMOTO, K
机构：
[1] ISHINOMAKI SENSHU UNIV,FAC SCI & TECHNOL,DEPT ELECTR MAT,MINAMISAKAI,ISHINOMAKI 986,JAPAN
[2] RES INST ELECT & MAGNET MAT,SENDAI 982,JAPAN
来源：
JOURNAL OF CRYSTAL GROWTH | 1991年 / 115卷 / 1-4期
关键词：
D O I：
10.1016/0022-0248(91)90849-Z
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
The AgGaS2 single crystals were grown by chemical transport using either halides or iodine. The transport rate had a maximum in the region of 1 to 6 g-atom/m3 halogen. The maximum transport rate increased in the order of Cl, Br and I. The relationship between the intensity of PL emission peaks and the amount of transport agent indicated that nonradiative recombination centers were increasingly introduced in as-grown crystals with an increase in the amount of transport agents.
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页码：802 / 806
页数：5
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