ELECTRICAL-PROPERTIES AND STABILITY OF SUPERSATURATED PHOSPHORUS-DOPED SILICON LAYERS

被引：56
作者：
FINETTI, M
NEGRINI, P
SOLMI, S
NOBILI, D
机构：
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1981年 / 128卷 / 06期
关键词：
D O I：
10.1149/1.2127626
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
引用
收藏
页码：1313 / 1317
页数：5
相关论文
共 23 条
[1]  
[Anonymous], 1975, EQUILIBRIUM GEN KINE
[2]  
APPLETON BR, 1978, LASER SOLID INTERACT, P291
[3]  
BENTON JL, 1980, LASER ELECTRON BEAM, P430
[4]   PRECIPITATION OF PHOSPHORUS FROM SOLID SOLUTION IN GE-SI ALLOY [J].
EKSTROM, L ;
DISMUKES, JP .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1966, 27 (05) :857-&
[5]   A NEW DEVICE USING THE TUNNELING PROCESS IN NARROW P-N JUNCTIONS [J].
ESAKI, L ;
MIYAHARA, Y .
SOLID-STATE ELECTRONICS, 1960, 1 (01) :13-&
[6]   QUANTITATIVE MODEL FOR DIFFUSION OF PHOSPHORUS IN SILICON AND EMITTER DIP EFFECT [J].
FAIR, RB ;
TSAI, JCC .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1977, 124 (07) :1107-1118
[7]  
HAM FS, 1958, J PHYS CHEM SOLIDS, V6, P355
[8]  
HILL C, 1980, LASER ELECTRON BEAM, P26
[9]  
HILLIARD JE, 1962, T METALL SOC AIME, V224, P906
[10]  
IRVIN JC, 1970, NBS387 SPEC PUBL, P99
123