CONDUCTIVITY MOBILITIES OF ELECTRONS AND HOLES IN HEAVILY DOPED SILICON

被引:64
作者
BACKENSTOSS, G
机构
来源
PHYSICAL REVIEW | 1957年 / 108卷 / 06期
关键词
D O I
10.1103/PhysRev.108.1416
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
引用
收藏
页码:1416 / 1419
页数:4
相关论文
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