SINGLE AND DOUBLE QUANTUM-WELL LASERS WITH A MONOLITHICALLY INTEGRATED PASSIVE SECTION

被引：26

作者：

WERNER, J ^{[1
]}

LEE, TP ^{[1
]}

KAPON, E ^{[1
]}

COLAS, E ^{[1
]}

STOFFEL, NG ^{[1
]}

SCHWARZ, SA ^{[1
]}

SCHWARTZ, LC ^{[1
]}

ANDREADAKIS, NC ^{[1
]}

机构：

[1] BELLCORE,RED BANK,NJ 07701

来源：

APPLIED PHYSICS LETTERS | 1990年 / 57卷 / 08期

关键词：

D O I：

10.1063/1.103428

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Single (SQW) and double (DQW) quantum well composite cavity GaAs/AlGaAs lasers with an integrated passive section were fabricated and compared. Si implantation was used for partial quantum well disordering in the passive section. Implanted DQW lasers with a 2.6-mm-long cavity had threshold currents of 26.3 mA compared to 33 mA for implanted SQW lasers. The measured resonant absorption in the passive section showed an exponential roll-off in agreement with Urbach's law. The characteristic energy E0 associated with Urbach's law was 6 meV for untreated SQW and DQW lasers and ≊11 meV for implanted SQW and DQW lasers.

引用

页码：810 / 812

页数：3

共 7 条

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