HOMOGENEOUS DEGRADATION OF SURFACE EMITTING TYPE INGAASP/INP LIGHT-EMITTING DIODES

被引：6
作者：
FUKUDA, M
FUJITA, O
UEHARA, S
机构：
来源：
JOURNAL OF LIGHTWAVE TECHNOLOGY | 1988年 / 6卷 / 12期
关键词：
D O I：
10.1109/50.9249
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：1808 / 1814
页数：7
相关论文
共 16 条
[1]   DIRECT EVIDENCE FOR THE ROLE OF GOLD MIGRATION IN THE FORMATION OF DARK-SPOT DEFECTS IN 1.3-MU-M INP/INGAASP LIGHT-EMITTING-DIODES [J].
CHIN, AK ;
ZIPFEL, CL ;
GEVA, M ;
CAMLIBEL, I ;
SKEATH, P ;
CHIN, BH .
APPLIED PHYSICS LETTERS, 1984, 45 (01) :37-39
[2]   CATHODOLUMINESCENCE EVALUATION OF DARK SPOT DEFECTS IN INP/INGAASP LIGHT-EMITTING-DIODES [J].
CHIN, AK ;
ZIPFEL, CL ;
MAHAJAN, S ;
ERMANIS, F ;
DIGIUSEPPE, MA .
APPLIED PHYSICS LETTERS, 1982, 41 (06) :555-557
[3]   THE MIGRATION OF GOLD FROM THE P-CONTACT AS A SOURCE OF DARK SPOT DEFECTS IN INP/INGAASP LEDS [J].
CHIN, AK ;
ZIPFEL, CL ;
ERMANIS, F ;
MARCHUT, L ;
CAMLIBEL, I ;
DIGIUSEPPE, MA ;
CHIN, BH .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1983, 30 (04) :304-310
[4]   RAPID DEGRADATION OF INGAASP/INP DOUBLE HETEROSTRUCTURE LASERS DUE TO 110 DARK LINE DEFECT FORMATION [J].
ENDO, K ;
MATSUMOTO, S ;
KAWANO, H ;
SAKUMA, I ;
KAMEJIMA, T .
APPLIED PHYSICS LETTERS, 1982, 40 (11) :921-923
[5]   DARK DEFECTS IN INGAASP INP DOUBLE HETEROSTRUCTURE LASERS UNDER ACCELERATED AGING [J].
FUKUDA, M ;
WAKITA, K ;
IWANE, G .
JOURNAL OF APPLIED PHYSICS, 1983, 54 (03) :1246-1250
[6]   PHOTO-ELASTIC WAVEGUIDES AND THEIR EFFECT ON STRIPE-GEOMETRY GAAS-GA1-XALXAS LASERS [J].
KIRKBY, PA ;
SELWAY, PR ;
WESTBROOK, LD .
JOURNAL OF APPLIED PHYSICS, 1979, 50 (07) :4567-4579
[7]   STRAIN-RELATED DEGRADATION PHENOMENA IN LONG-LIVED GAAIAS STRIPE LASERS [J].
ROBERTSON, MJ ;
WAKEFIELD, B .
JOURNAL OF APPLIED PHYSICS, 1981, 52 (07) :4462-4466
[8]   RECENT ADVANCES IN THE PERFORMANCE AND RELIABILITY OF INGAASP LEDS FOR LIGHTWAVE COMMUNICATION-SYSTEMS [J].
SAUL, RH .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1983, 30 (04) :285-295
[9]   DEGRADED INGAASP/INP DOUBLE HETEROSTRUCTURE LASER OBSERVATION WITH ELECTRON-PROBE MICROANALYZER [J].
SEKI, M ;
FUKUDA, M ;
WAKITA, K .
APPLIED PHYSICS LETTERS, 1982, 40 (02) :115-117
[10]   INGAASP INP 1.3-MU-M WAVELENGTH SURFACE-EMITTING LEDS FOR HIGH-SPEED SHORT HAUL OPTICAL COMMUNICATION-SYSTEMS [J].
SUZUKI, A ;
UJI, T ;
INOMOTO, Y ;
HAYASHI, J ;
ISODA, Y ;
NOMURA, H .
JOURNAL OF LIGHTWAVE TECHNOLOGY, 1985, 3 (06) :1217-1222
12