OPERATION OF SCHOTTKY-BARRIER FIELD-EFFECT TRANSISTORS OF 3C-SIC UP TO 400-DEGREES-C

被引：26

作者：

DAIMON, H

YAMANAKA, M

SHINOHARA, M

SAKUMA, E

MISAWA, S

ENDO, K

YOSHIDA, S

机构：

来源：

APPLIED PHYSICS LETTERS | 1987年 / 51卷 / 25期

关键词：

D O I：

10.1063/1.99010

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2106 / 2108

页数：3

共 14 条

[1]

Air Force Cambridge Research Laboratories (U.S.)

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