DIFFUSION OF ZN IN 3-V SEMICONDUCTING COMPOUNDS

被引：19
作者：
SHAW, D
SHOWAN, SR
机构：
[1] Physics Department, University of Hull
来源：
PHYSICA STATUS SOLIDI | 1969年 / 32卷 / 01期
关键词：
D O I：
10.1002/pssb.19690320113
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The experimental results for chemical and isoconcentration diffusion of Zn in AlSb, GaAs, and GaP have been interpreted using Longini's interstitial/substitutional model. Satisfactory agreement is found with the isoconcentration data if the substitutional Zn is a fully ionized monovalent acceptor and the interstitial is a monovalent donor. The characteristic features of chemical diffusion are explained in terms of a non‐equilibrium situation dominated by the rate of supply of vacancies on the group III sub‐lattice and the flux of interstitial Zn donors. Diffusion‐induced dislocations are assumed to play a major role in the supply of vacancies. Satisfactory qualitative agreement with the chemical diffusion data is found. Copyright © 1969 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim
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页码：109 / &
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