EPITAXIAL GROWTH OF INP ON GAAS IN AN OPEN FLOW SYSTEM

被引：8
|
作者：
SEKI, H
KINOSHITA, M
机构：
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS | 1968年 / 7卷 / 09期
关键词：
D O I：
10.1143/JJAP.7.1142
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
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页码：1142 / +
页数：1
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