HIGH-POWER HIGH-GAIN MONOLITHICALLY INTEGRATED PREAMPLIFIER POWER-AMPLIFIER

被引：11

作者：

YEH, PS ^{[1
]}

WU, IF ^{[1
]}

JIANG, S ^{[1
]}

DAGENAIS, M ^{[1
]}

机构：

[1] UNIV MARYLAND,JOINT PROGRAM ADV ELECTR MAT,COLLEGE PK,MD 20742

来源：

ELECTRONICS LETTERS | 1993年 / 29卷 / 22期

关键词：

INTEGRATED OPTOELECTRONICS; SEMICONDUCTOR LASERS; OPTICAL AMPLIFIERS;

D O I：

10.1049/el:19931319

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The monolithic integration of an index-guided single lateral mode optical preamplifier with a power tapered semiconductor laser amplifier is reported. With a coupled input power of only 6 mW, 4.5W of output power is obtained at 810nm. The far-field pattern is dominated by a diffraction-limited single lobe. An internal small signal gain of 35dB is demonstrated.

引用

页码：1981 / 1983

页数：3

共 8 条

[1] 3.3W CW DIFFRACTION LIMITED BROAD AREA SEMICONDUCTOR AMPLIFIER
GOLDBERG, L
HALL, DC
MEHUYS, D
[J]. ELECTRONICS LETTERS, 1992, 28 (12) : 1082 - 1084
[2] 21-W BROAD AREA NEAR-DIFFRACTION-LIMITED SEMICONDUCTOR AMPLIFIER
GOLDBERG, L
MEHUYS, D
[J]. APPLIED PHYSICS LETTERS, 1992, 61 (06) : 633 - 635
[3] HIGH-POWER, STRAINED-LAYER AMPLIFIERS AND LASERS WITH TAPERED GAIN REGIONS
KINTZER, ES
WALPOLE, JN
CHINN, SR
WANG, CA
MISSAGGIA, LJ
[J]. IEEE PHOTONICS TECHNOLOGY LETTERS, 1993, 5 (06) : 605 - 608
[4] 4.5W CW, NEAR-DIFFRACTION-LIMITED TAPERED-STRIPE SEMICONDUCTOR OPTICAL AMPLIFIER
MEHUYS, D
GOLDBERG, L
WAARTS, R
WELCH, DF
[J]. ELECTRONICS LETTERS, 1993, 29 (02) : 219 - 221
[5] 2.0W CW, DIFFRACTION-LIMITED TAPERED AMPLIFIER WITH DIODE INJECTION
MEHUYS, D
WELCH, DF
GOLDBERG, L
[J]. ELECTRONICS LETTERS, 1992, 28 (21) : 1944 - 1946
[6] PARKE R, 1993, CLEO 93, P108
[7] HIGH-POWER STRAINED-LAYER INGAAS/ALGAAS TAPERED TRAVELING-WAVE AMPLIFIER
WALPOLE, JN
KINTZER, ES
CHINN, SR
WANG, CA
MISSAGGIA, LJ
[J]. APPLIED PHYSICS LETTERS, 1992, 61 (07) : 740 - 741
[8] WU IF, IEEE PHOTONIC TECH L, V4, P991

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