NARROW-BANDGAP A-GE-H A-SI-H MULTILAYERS FOR AMORPHOUS SILICON-BASED SOLAR-CELLS

被引：5
作者：
DEKI, H
OHMURA, M
MIYAZAKI, S
HIROSE, M
机构：
[1] Department of Electrical Engineering, Hiroshima University, Higashi-Hiroshima, Hiroshima, 724
来源：
SOLAR ENERGY MATERIALS AND SOLAR CELLS | 1994年 / 34卷 / 1-4期
关键词：
D O I：
10.1016/0927-0248(94)90070-1
中图分类号：
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号：
0807 ; 0820 ;
摘要：
Precisely defined multilayers consisting of a-Ge:H wells and a-Si:H barrier layers have been prepared and characterized as a new type of narrow-bandgap materials for amorphous silicon-based solar cells. It is found that the optical and electrical properties of the layered structures are dramatically improved compared to bulk a-Si1-XGeX:H alloy, being explained by the quantum confinement effects in the ultra-thin a-Ge:H wells. The light-induced changes in the photoconductivity is also remarkably reduced for the multilayers.
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收藏
页码：431 / 437
页数：7
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