CW CO2 AND RUBY-LASER ANNEALING OF ION-IMPLANTED HG1-XCDXTE

被引：34

作者：

BAHIR, G ^{[1
]}

KALISH, R ^{[1
]}

机构：

[1] TECHNION ISRAEL INST TECHNOL,DEPT PHYS,HAIFA,ISRAEL

来源：

APPLIED PHYSICS LETTERS | 1981年 / 39卷 / 09期

关键词：

D O I：

10.1063/1.92864

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：730 / 732

页数：3

共 9 条

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[3]

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[6] DECHANNELING BY DISLOCATIONS IN ION-IMPLANTED AL [J].

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[8] ION-IMPLANTATION DOPING OF CD0.2HG0.8TE FOR INFRARED DETECTORS [J].

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IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (01) :58-62

[9] HG-CD-TE PHASE-DIAGRAM DETERMINATION BY HIGH-PRESSURE REFLUX [J].

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