INALAS/INGAAS/INP HEMTS WITH HIGH BREAKDOWN VOLTAGES USING DOUBLE-RECESS GATE PROCESS

The DC and RF performance of InAlAs/InGaAs/InP HEMTs fabricated using a double-recess gate process are reported. A gate-drain breakdown voltage as high as 16 V was observed. The HEMTs also exhibited a high source-drain breakdown voltage near pinchoff of 16 V and a low RF output conductance of 6 mS/mm. For a 1.4-mu-m gate length, an intrinsic transconductance or 560 mS/mm and f(T) and f(max) values of 16 and 40 GHz, respectively, were achieved.