THEORY OF OPTICAL ABSORPTION BY VIBRATIONS OF DEFECTS IN SILICON

[1] SINGLE PHONON ABSORPTION BANDS IN FAST NEUTRON IRRADIATED SILICON [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1962, 23 (JUN) : 573 - &

[2] THE MOSSBAUER EFFECT [J]. REPORTS ON PROGRESS IN PHYSICS, 1962, 25 : 441 - 524

[3] LATTICE VIBRATIONS IN SILICON AND GERMANIUM [J]. PHYSICAL REVIEW LETTERS, 1959, 2 (06) : 256 - 258

[4] THEORY OF THE LATTICE VIBRATIONS OF GERMANIUM [J]. PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1959, 253 (1273): : 260 - 276

[5] DAWBER PG, 1963, P ROY SOC A

[6] THEORY OF THE DIELECTRIC CONSTANTS OF ALKALI HALIDE CRYSTALS [J]. PHYSICAL REVIEW, 1958, 112 (01): : 90 - 103

[7] FAN HY, 1957, PHYS REV, V108, P268

[8] DIRECT LATTICE ABSORPTION ASSOCIATED WITH SHALLOW IMPURITY LEVELS [J]. PHILOSOPHICAL MAGAZINE, 1962, 7 (78): : 953 - &

[9] RESONANT ABSORPTION OF NEUTRONS BY CRYSTALS [J]. PHYSICAL REVIEW, 1962, 127 (02): : 461 - &

[10] LATTICE ABSORPTION BANDS IN SILICON [J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1959, 73 (470): : 265 - 272

[1] SINGLE PHONON ABSORPTION BANDS IN FAST NEUTRON IRRADIATED SILICON [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1962, 23 (JUN) : 573 - &

[2] THE MOSSBAUER EFFECT [J]. REPORTS ON PROGRESS IN PHYSICS, 1962, 25 : 441 - 524

[3] LATTICE VIBRATIONS IN SILICON AND GERMANIUM [J]. PHYSICAL REVIEW LETTERS, 1959, 2 (06) : 256 - 258

[4] THEORY OF THE LATTICE VIBRATIONS OF GERMANIUM [J]. PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1959, 253 (1273): : 260 - 276

[5] DAWBER PG, 1963, P ROY SOC A

[6] THEORY OF THE DIELECTRIC CONSTANTS OF ALKALI HALIDE CRYSTALS [J]. PHYSICAL REVIEW, 1958, 112 (01): : 90 - 103

[7] FAN HY, 1957, PHYS REV, V108, P268

[8] DIRECT LATTICE ABSORPTION ASSOCIATED WITH SHALLOW IMPURITY LEVELS [J]. PHILOSOPHICAL MAGAZINE, 1962, 7 (78): : 953 - &

[9] RESONANT ABSORPTION OF NEUTRONS BY CRYSTALS [J]. PHYSICAL REVIEW, 1962, 127 (02): : 461 - &

[10] LATTICE ABSORPTION BANDS IN SILICON [J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1959, 73 (470): : 265 - 272