ISFETS USING INORGANIC GATE THIN-FILMS

被引:165
作者
ABE, H
ESASHI, M
MATSUO, T
机构
[1] Department of Electronic Engineering, Tohoku University, Sendai
关键词
D O I
10.1109/T-ED.1979.19799
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The characteristics of various types of ISFET's using inorganic gate films are described. The pH and pNa selectivities are investigated for SiO2, Si3N4, A12O3, alumino-silicate, and sodiumalumino-silicate gate dielectrics. The transient response and device stability are also studied for different values of solution pH. The Al2O3 gate shows a nearly ideal pH response, excellent stability, and selectivity to other cations. On the other hand, the Si3N4 gate is also a good pH sensor, but it is proved by the studies of SiO2 and SiOxNy films that the oxygen content in its surface degrades its properties as a pH sensor. Sodium-alumino-silicate, which is generally known as a material for pNa selective glass electrodes, is utilized as a gate film for the pNa ISFET. The pNa selectivity of this device is comparable to that of the conventional glass electrode. The alumino-silicate gate has also a pNa selectivity, but iti s inferior to the sodium-alumino-silicate gate. Copyright © 1979 by The Institute of Electrical and Electronics Engineers, Inc.
引用
收藏
页码:1939 / 1944
页数:6
相关论文
共 14 条
[1]  
ALWITT RS, 1972, OXIDES OXIDE FILMS, V4, P169
[3]   FIELD-EFFECT POTENTIOMETRIC SENSORS [J].
BUCK, RP ;
HACKLEMAN, DE .
ANALYTICAL CHEMISTRY, 1977, 49 (14) :2315-2321
[4]  
CHEUNG PW, 1977, MAR WORKSH THEOR DES
[5]  
EISENMAN G, 1967, GLASS ELECTRODE HYDR
[6]   CHEMICAL DURABILITY OF NA2O-AL2O3-SIO2 GLASSES IN RELATION TO THEIR MEMBRANE-POTENTIALS [J].
ELSHAMY, TM ;
MORSI, SE ;
MELIBARI, SA .
JOURNAL OF NON-CRYSTALLINE SOLIDS, 1975, 19 (DEC) :201-211
[7]   INTEGRATED MICRO MULTI ION SENSOR USING FIELD-EFFECT OF SEMICONDUCTOR [J].
ESASHI, M ;
MATSUO, T .
IEEE TRANSACTIONS ON BIOMEDICAL ENGINEERING, 1978, 25 (02) :184-192
[8]   HYDROGEN-ION SELECTIVE GLASS-ELECTRODE [J].
JOHANSSON, G ;
KARLBERG, B ;
WIKBY, A .
TALANTA, 1975, 22 (12) :953-966
[9]   INTEGRATED FIELD-EFFECT ELECTRODE FOR BIOPOTENTIAL RECORDING [J].
MATSUO, T ;
WISE, KD .
IEEE TRANSACTIONS ON BIOMEDICAL ENGINEERING, 1974, BM21 (06) :485-487
[10]   POTASSIUM ION-SENSITIVE FIELD-EFFECT TRANSISTOR [J].
MOSS, SD ;
JANATA, J ;
JOHNSON, CC .
ANALYTICAL CHEMISTRY, 1975, 47 (13) :2238-2243