LUMINESCENCE AND ELECTRON-SPIN-RESONANCE STUDIES OF DEFECTS IN HYDROGENATED AMORPHOUS-SILICON

被引：144

作者：

STREET, RA

BIEGELSEN, DK

机构：

来源：

SOLID STATE COMMUNICATIONS | 1980年 / 33卷 / 12期

关键词：

D O I：

10.1016/0038-1098(80)90780-2

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：1159 / 1162

页数：4

共 17 条

[1] DENSITY OF STATES IN GAP OF TETRAHEDRALLY BONDED AMORPHOUS-SEMICONDUCTORS [J].

ADLER, D .

PHYSICAL REVIEW LETTERS, 1978, 41 (25) :1755-1758

[2] PHOTO-LUMINESCENCE AND LIFETIME STUDIES ON PLASMA DISCHARGE A-SI [J].

AUSTIN, IG ;

NASHASHIBI, TS ;

SEARLE, TM ;

LECOMBER, PG ;

SPEAR, WE .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 1979, 32 (1-3) :373-391

[3] ELECTRON SPIN RESONANCE IN AMORPHOUS SILICON, GERMANIUM, AND SILICON CARBIDE [J].

BRODSKY, MH ;

TITLE, RS .

PHYSICAL REVIEW LETTERS, 1969, 23 (11) :581-&

[4] DEFECT STATES IN AMORPHOUS SILICON [J].

ELLIOTT, SR .

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1978, 38 (04) :325-334

[5] NEGATIVE-U STATES IN GAP IN HYDROGENATED AMORPHOUS SILICON [J].

FISCH, R ;

LICCIARDELLO, DC .

PHYSICAL REVIEW LETTERS, 1978, 41 (13) :889-891

[6] DOPING AND ANNEALING EFFECTS ON ESR IN CHEMICALLY VAPOR-DEPOSITED AMORPHOUS SILICON [J].

HASEGAWA, S ;

KASAJIMA, T ;

SHIMIZU, T .

SOLID STATE COMMUNICATIONS, 1979, 29 (01) :13-16

[7] OPTICALLY INDUCED ELECTRON-SPIN RESONANCE IN DOPED AMORPHOUS SILICON [J].

KNIGHTS, JC ;

BIEGELSEN, DK ;

SOLOMON, I .

SOLID STATE COMMUNICATIONS, 1977, 22 (02) :133-137

[8] STRUCTURE OF AMORPHOUS (GE,SI)1-XYX ALLOYS [J].

PHILLIPS, JC .

PHYSICAL REVIEW LETTERS, 1979, 42 (17) :1151-1154

[9]

REHM W, 1976, 13TH P INT C PHYS SE, P525

[10]

Spear W. E., 1974, 5th International Conference on amorphous and liquid semiconductors, Vol.I, P1

← 1 2 →