GROWTH OF HIGH-PURITY INP BY METALORGANIC MBE (CBE)

被引：55

作者：

HEINECKE, H

BAUR, B

HOGER, R

MIKLIS, A

机构：

[1] Siemens Research Laboratories, D-8000 München 83

来源：

JOURNAL OF CRYSTAL GROWTH | 1990年 / 105卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(90)90352-L

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

This paper describes a systematic study on the growth of InP by metalorganic MBE (MOMBE) using trimethylindium (TMI) and phosphine (PH3) as starting materials. InP layers with free electron concentrations as low as 2×1014 cm-3 and 77 K Hall mobilities up to 132,000 cm2/V·s were obtained. The excellent optical properties of the layers are demonstrated by photoluminescence spectra which are dominated by well resolved excitonic transitions. The donor bound exciton recombinations are detectable up to the 6th component and show linewidths of less than 0.08 meV. © 1990.

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页码：143 / 148

页数：6

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