APPLICATION OF REFLECTION MASS-SPECTROMETRY TO MOLECULAR-BEAM EPITAXIAL-GROWTH OF INALAS AND INGAAS

被引：13
作者：
BRENNAN, TM
TSAO, JY
HAMMONS, BE
KLEM, JF
JONES, ED
机构：
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1989年 / 7卷 / 02期
关键词：
D O I：
10.1116/1.584733
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：277 / 282
页数：6
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