APPLICATION OF REFLECTION MASS-SPECTROMETRY TO MOLECULAR-BEAM EPITAXIAL-GROWTH OF INALAS AND INGAAS

被引：13
作者：
BRENNAN, TM
TSAO, JY
HAMMONS, BE
KLEM, JF
JONES, ED
机构：
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1989年 / 7卷 / 02期
关键词：
D O I：
10.1116/1.584733
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
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页码：277 / 282
页数：6
相关论文
共 26 条
[1]  
ADAMSON AW, 1982, PHYSICAL CHEM SURFAC
[2]  
BROWN AS, 1988, APPL PHYS LETT, V52, P14
[3]   ELECTRON MOBILITIES IN MODULATION DOPED GA0.47IN0.53AS/AL0.48IN0.52AS HETEROJUNCTIONS GROWN BY MOLECULAR-BEAM EPITAXY [J].
CHENG, KY ;
CHO, AY ;
DRUMMOND, TJ ;
MORKOC, H .
APPLIED PHYSICS LETTERS, 1982, 40 (02) :147-149
[4]  
Christian J. W., 2002, THEORY TRANSFORMATIO, V3rd
[5]  
COON DD, 1986, J APPL PHYS, V60, P8
[6]   ARSENIC STABILIZATION OF INP SUBSTRATES FOR GROWTH OF GAXIN1-XAS LAYERS BY MOLECULAR-BEAM EPITAXY [J].
DAVIES, GJ ;
HECKINGBOTTOM, R ;
OHNO, H ;
WOOD, CEC ;
CALAWA, AR .
APPLIED PHYSICS LETTERS, 1980, 37 (03) :290-292
[7]   THE GROWTH AND CHARACTERIZATION OF NOMINALLY UNDOPED AL1-XINXAS GROWN BY MOLECULAR-BEAM EPITAXY [J].
DAVIES, GJ ;
KERR, T ;
TUPPEN, CG ;
WAKEFIELD, B ;
ANDREWS, DA .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1984, 2 (02) :219-223
[8]   ALLOY CLUSTERING IN ALXGA1-XAS-GAAS QUANTUM-WELL HETEROSTRUCTURES [J].
HOLONYAK, N ;
LAIDIG, WD ;
VOJAK, BA ;
HESS, K ;
COLEMAN, JJ ;
DAPKUS, PD ;
BARDEEN, J .
PHYSICAL REVIEW LETTERS, 1980, 45 (21) :1703-1706
[9]   CLUSTERING IN MOLECULAR-BEAM EPITAXIAL ALXGA1-XAS-GAAS QUANTUM-WELL HETEROSTRUCTURE LASERS [J].
HOLONYAK, N ;
LAIDIG, WD ;
CAMRAS, MD ;
MORKOC, H ;
DRUMMOND, TJ ;
HESS, K ;
BURROUGHS, MS .
JOURNAL OF APPLIED PHYSICS, 1981, 52 (12) :7201-7207
[10]  
HONG WP, 1987, APPL PHYS LETT, V50, P10
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