1.3 MU-M GAINASP-INP BURIED HETEROSTRUCTURE GRADED INDEX SEPARATE CONFINEMENT MULTIPLE QUANTUM WELL (BH-GRIN-SC-MQW) LASERS ENTIRELY GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION (MOCVD)

被引:22
作者
KASUKAWA, A
IMAJO, Y
MAKINO, T
机构
关键词
D O I
10.1049/el:19890077
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:104 / 105
页数:2
相关论文
共 7 条
[1]   GAIN AND INTERVALENCE BAND ABSORPTION IN QUANTUM-WELL LASERS [J].
ASADA, M ;
KAMEYAMA, A ;
SUEMATSU, Y .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1984, 20 (07) :745-753
[2]   TEMPERATURE-DEPENDENCE OF THRESHOLD CURRENT IN GAAS/ALGAAS QUANTUM WELL LASERS [J].
BLOOD, P ;
COLAK, S ;
KUCHARSKA, AI .
APPLIED PHYSICS LETTERS, 1988, 52 (08) :599-601
[3]  
FOREST SR, 1984, APPL PHYS LETT, V45, P1199
[4]   INGAASP MULTIPLE QUANTUM WELL LASERS WITH PLANAR BURIED HETEROSTRUCTURE PREPARED BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].
ISHIGURO, H ;
KAWABATA, T ;
KOIKE, S .
APPLIED PHYSICS LETTERS, 1988, 52 (25) :2099-2101
[5]  
TAKANO S, 1988, 4TH INT C MOVPE A, V2, P18
[6]   ULTRALOW THRESHOLD, GRADED-INDEX WAVEGUIDE, SEPARATE CONFINEMENT, CW BURIED-HETEROSTRUCTURE LASERS [J].
TSANG, WT ;
LOGAN, RA ;
DITZENBERGER, JA .
ELECTRONICS LETTERS, 1982, 18 (19) :845-847
[7]  
Yamada M., 1986, Transactions of the Institute of Electronics and Communication Engineers of Japan, Section E (English), VE69, P948