MEASUREMENT OF THE VELOCITY OF THE CRYSTAL-LIQUID INTERFACE IN PULSED LASER ANNEALING OF SI

被引：119

作者：

GALVIN, GJ

THOMPSON, MO

MAYER, JW

HAMMOND, RB

PAULTER, N

PEERCY, PS

机构：

[1] LOS ALAMOS NATL LABS,LOS ALAMOS,NM 87544

[2] SANDIA NATL LABS,ALBUQUERQUE,NM 87185

来源：

PHYSICAL REVIEW LETTERS | 1982年 / 48卷 / 01期

关键词：

D O I：

10.1103/PhysRevLett.48.33

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：33 / 36

页数：4

共 12 条

[1]

AUSTON DH, 1978, APPL PHYS LETT, V33, P538

[2] MELTING MODEL FOR PULSING-LASER ANNEALING OF IMPLANTED SEMICONDUCTORS [J].

BAERI, P ;

CAMPISANO, SU ;

FOTI, G ;

RIMINI, E .

JOURNAL OF APPLIED PHYSICS, 1979, 50 (02) :788-797

[3] PHASE-TRANSITIONS IN AMORPHOUS SI PRODUCED BY RAPID HEATING [J].

BAERI, P ;

FOTI, G ;

POATE, JM ;

CULLIS, AG .

PHYSICAL REVIEW LETTERS, 1980, 45 (25) :2036-2039

[4] SEGREGATION AND INCREASED DOPANT SOLUBILITY IN PT-IMPLANTED AND LASER-ANNEALED SI LAYERS [J].

CULLIS, AG ;

WEBBER, HC ;

POATE, JM ;

SIMONS, AL .

APPLIED PHYSICS LETTERS, 1980, 36 (04) :320-322

[5]

FARBER TE, 1972, THEORY LIQUID METALS

[6]

LO HW, 1980, PHYS REV LETT, V44, P604

[7] INTERFACE INSTABILITY AND CELL-FORMATION IN ION-IMPLANTED AND LASER-ANNEALED SILICON [J].

NARAYAN, J .

JOURNAL OF APPLIED PHYSICS, 1981, 52 (03) :1289-1293

[8]

PEERCY PS, UNPUB

[9] MEASUREMENT OF LATTICE TEMPERATURE OF SILICON DURING PULSED LASER ANNEALING [J].

STRITZKER, B ;

POSPIESZCZYK, A ;

TAGLE, JA .

PHYSICAL REVIEW LETTERS, 1981, 47 (05) :356-358

[10] REASONS TO BELIEVE PULSED LASER ANNEALING OF SI DOES NOT INVOLVE SIMPLE THERMAL MELTING [J].

VANVECHTEN, JA ;

TSU, R ;

SARIS, FW ;

HOONHOUT, D .

PHYSICS LETTERS A, 1979, 74 (06) :417-421

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