NATIVE DEFECT RELATED OPTICAL-PROPERTIES OF ZNGEP2

被引：36

作者：

DIETZ, N ^{[1
]}

TSVEYBAK, I ^{[1
]}

RUDERMAN, W ^{[1
]}

WOOD, G ^{[1
]}

BACHMANN, KJ ^{[1
]}

机构：

[1] INRAD INC,NORTHVALE,NJ 07647

来源：

APPLIED PHYSICS LETTERS | 1994年 / 65卷 / 22期

关键词：

D O I：

10.1063/1.112555

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We present photoluminescence, photoconductivity, and optical absorption spectra for ZnGeP2 crystals grown from the melt by gradient freezing and from the vapor phase by high pressure physical vapor transport (HPVT). A model of donor and acceptor related subbands in the energy gap of ZnGeP 2 is introduced that explains the experimental results. The emission with peak position at 1.2 eV is attributed to residual disorder on the cation sublattice. The lower absorption upon annealing is interpreted in terms of both the reduction of the disorder on the cation sublattice and changes in the Fermi level position. The n-type conductivity of ZnGeP2 crystals grown under Ge-deficient conditions by the HPVT is related to the presence of additional donor states. © 1994 American Institute of Physics.

引用

页码：2759 / 2761

页数：3

共 13 条

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