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LIQUID-PHASE EPITAXIAL-GROWTH AND CHARACTERIZATION OF INASXSB1-X AND IN1-YGAYSB ON (111)B INSB SUBSTRATES
被引:22
|
作者
:
ABROKWAH, JK
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV SO CALIF,DEPT ELECT ENGN,LOS ANGELES,CA 90007
ABROKWAH, JK
GERSHENZON, M
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV SO CALIF,DEPT ELECT ENGN,LOS ANGELES,CA 90007
GERSHENZON, M
机构
:
[1]
UNIV SO CALIF,DEPT ELECT ENGN,LOS ANGELES,CA 90007
[2]
UNIV SO CALIF,DEPT MAT SCI,LOS ANGELES,CA 90007
来源
:
JOURNAL OF ELECTRONIC MATERIALS
|
1981年
/ 10卷
/ 02期
关键词
:
D O I
:
10.1007/BF02654801
中图分类号
:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号
:
0808 ;
0809 ;
摘要
:
引用
收藏
页码:379 / 421
页数:43
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